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Silicon Carbide Semiconductor Device with Trench Gate

A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate

METHOD OF MANUFACTURING A DIAMOND-SILICON CARBIDE-SILICON

in a matrix of silicon carbide and silicon, orThe formed green bodies contains additionally increased wear resistance of the formed new matrix

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Full-Text | Demonstration of a Robust All-Silicon-Carbide

We have demonstrated that hexagonal silicon carbide junction isolation electrode devices have a much higher forward bias turn-on potential than Si (2.3 V

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of Binary Powder Mixing in Sintering of Fine Silicon Carbide

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