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A 1 MHz hard-switched silicon carbide DC/DC converter (

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Full-Text | Towards Silicon Carbide VLSI Circuits for

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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electronic structure of two-dimensional silicon carbide |

Two-dimensional silicon carbide (2D-SiC) has attracted incredible research attention recently because of its wide bandgap and high exciton binding

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Silicon carbide: A playground for ID-modulation electronics

Publication series Name Materials Science Forum Number PART 1 Volume 527-529 ISSN (Print) 02555476 Other Other International Conference on Silicon Carbide

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+ High Voltage Pulsers in Silicon and SiC Silicon Carbide

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Global Silicon Carbide (SiC) Market Analysis 2016-2018 and

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Silicon Carbide Semiconductor Device with Trench Gate

A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate

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